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Photoluminescence imaging measurement system

Photoluminescence Imaging Measurement System

Product Name : Photoluminescence Imaging Measurement System

Item No. : PLM

Description

Photoluminescence is light emission from any form of matter after the absorption of photons. Photoluminescence process can be classified by three major steps such as absorption, transmission of energy and light emission. Theoretically, light is directed onto the surface of materials where it is absorbed and then a process called photo-excitation will occur. The materials jump to a higher energy level, and will release energy , then it will return to a lower energy level. The luminescence through this process is photoluminescence or so-called PL. PL spectrum is a simple, rapid, non-contact and non-destructive technique to detect the electronic configuration of materials.
Features :
  • Wide Spectrum Measurement:Use PMT and InGaAs Detector to detect PL measurement from 200nm to 1700nm
  • Various Laser Diode: Can equipped with various laser diodes
  • Rapid Mapping Ability:
    5 minutes for 50mm x 50mm sample
    15 minutes for 100mm x 100mm sample
  • Minimum Excitation Spot: 50um
  • Megapixel Camera: Observe sample position and beam spot
  • Expandability:
    Time-resolved Photoluminescence (TRPL)
    Electroluminescence (EL)
    Light Beam Induced Current Measurement (LBIC)
    Raman Spectrometer
Applications:
  • Photoluminescence Measurement
  • Band Gap Determination
  • Impurity Level and Defect Detection
  • Recombination Mechanisms
  • Materials Quality
  • III-V Compound Semiconductor
  • Epitaxial Layer Scanning
  • CIGS,CZTS,Perovskite Solar Cell
  • Luminescence Property of Crystalline Silicon Solar Cell
Fig. 1 Minimum Spot <50um By Using Knife Edge Measurement
Fig. 2 Measurement Result of CIGS Solar Cells
Fig. 3 Measurement Result of Silicon Solar Cells
Fig. 4 Measurement Result of Perovskite Solar Cell
Fig. 5 LBIC Function
Fig. 6 EL Function
Fig. 7 Optical Fiber Guide Enables the Flexible Excitation Light Source
Fig. 8 User-friendly Interface
Specification :
Items Specification
Excitation Light Source
  • 635nm Semiconductor Laser System
  • Central Wavelength: 635±10nm
  • Output Power: 200mW,Instability <1%hr
  • TEM00
Various Excitation Wavelength
  • 325nm,405nm,532nm,633nm,785nm
Optical Fiber Guide
  • Multi-mode Optical Fiber with AR Coating Aspheric and Efficiency Condenser
    System from the Wavelength 500~700nm
Spectrometer
  • Focal Length: 1/4m, F/#=3.9
  • Resolution: 0.1nm
  • Multi-grating Design
  • Wavelength Range: 270nm~2000nm
  • Stray Light: <10-5
  • Slit Width: 10um~3mm (Adjustable)
VIS Detector
  • Wavelength Range: 185~930nm
  • Gain: 4.5 x 10-5
  • High Voltage Power Supply and connections
NIR Detector
  • Wavelength Range: 900nm~1700nm,InP/InGaAs Photocathode Materials
  • Equipped with High Voltage Power Supply, Amplifier, Thermoelectric Cooler and
    Spectrum System Adapter
  • Anode Pulse Rise Time: 0.9nm
  • Gain: 1 x 106
  • Operating Temperature:-60℃
Automatic Sample Stage
  • XY Automatic Sample Stage
  • XY Working Distance: 50nm,100mm,200mm (Optional)
  • Linear Guide
  • Resolution: >0.2um
  • Maximum Speed: 45mm/sec