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PV Analyzer

LSD4 Laser Scanning Defect Mapping System

Product Name : Laser Scanning Defect Mapping System

Item No. : LSD4

Description

Features:
LSD4 system can help users improve their manufacturing process by using laser scanning defect mapping system.
  • Can scan the photocurrent distribution of the sample surface.
  • Can scan the open-circuit voltage and short-circuit current distribution.
  • Can analyze the surface dust of the solar cell.
  • Can analyze the short-circuit area.
  • Can recognize and analyze the defects.
  • Can analyze the diffusion length of minority carrier (Optional function).
  • PV Response Mapping (can equip with white light excitation source (optional function).

Mono-Crystalline Silicon Solar Cell

LBIC

Specification
Item Description
Excitation Source
  1. 405±1 nm (can extend to 4 excitation sources)
  2. Max. output power:200 mW
  3. Stability <2 % (4 hr)
  4. Multi-wavelength automatic switching design
  5. Microcontroller board for multi-laser heads control
  6. Wavelength selection and output power can be controlled by software
Laser Spot Size
  1. TEM00
  2. Min. spot size: <40 um
Scan Area
  1. Scan area: ³ 16 cm ´ 16 cm
  2. Scan area can be customized
Mapping Resolution
  1. Resolution £ 50 um
  2. Mapping resolution can be setup through the software
Current Range
  1. 1 uA to 10 mA
Spatial Resolution
  1. 40 micron
Measurement module
  1. 16 bit A/D resolution ability
  2. S/N >1000
  3. Ultra-low noise amplifier module
(W x D x H)
  1. 60 cm x 60 cm x 100 cm
Software
  1. Excitation wavelength switch function
  2. Excitation power adjustment function
  3. LBIC 3Ddisplay
  4. 2D profile analysis (electrode depth to width ratio.)
  5. Distribution analysis of photocurrent response (can be equipped with long wavelength range excitation source)
  6. Data saved and export function
Computer System
  1. IPC
  2. Windows operation system
Optional Functions
項目 標準規格
Laser Source
  1. DPSS 650±1 nm (can extend to 4 excitation sources)
  2. Max. output power:200 mW
  3. Stability <2 % (4 hr)
  4. Beam diameter: <1.3 mm
  5. Wavelength combiner optics kits
Laser Source
  1. Diode laser 850±1 nm (can extend to 4 excitation sources)
  2. Max. output power:200 mW
  3. Stability <2 % (4 hr)
  4. Beam diameter: <1.3 mm
  5. Wavelength combiner optics kits
Laser Source
  1. Diode laser 980±1 nm (can extend to 4 excitation sources)
  2. Max. output power:200 mW
  3. Stability <2 % (4 hr)
  4. Beam diameter: <1.3 mm
  5. Wavelength combiner optics kits